The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Aug. 09, 2007
Applicant:
Yoshiaki Nozaki, Iga, JP;
Inventor:
Yoshiaki Nozaki, Iga, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a photodiode formed using a silicon substrate, a wide-bandgap semiconductor layer formed on the silicon substrate and having a bandgap larger than that of silicon, and a switching element formed using the wide-bandgap semiconductor layer. The switching element is electrically connected to the photodiode so as to be on/off-controlled by a control signal from the photodiode.
Nozaki, Yoshiaki. (2012). Semiconductor device (U.S. Patent No. 8232580). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8232580
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile