The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Jul. 07, 2010
Applicant:
Won-kyu Kim, Gyeonggi-do, KR;
Inventor:
Won-Kyu Kim, Gyeonggi-do, KR;
Assignee:
Hynix Semiconcuctor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
A doping method for a semiconductor device includes forming a trench in a semiconductor substrate, forming a doped layer doped with a dopant over the undoped layer, and forming a doped region into which the dopant is diffused, wherein the doped region is a portion of the semiconductor substrate in contact with the doped layer.