The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Nov. 09, 2009
Seung-mi Lee, Gyeonggi-do, KR;
Yun-hyuck Ji, Gyeonggi-do, KR;
Tae-kyun Kim, Gyeonggi-do, KR;
Jin-yul Lee, Gyeonggi-do, KR;
Seung-Mi Lee, Gyeonggi-do, KR;
Yun-Hyuck Ji, Gyeonggi-do, KR;
Tae-Kyun Kim, Gyeonggi-do, KR;
Jin-Yul Lee, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a substrate with a recess pattern, a gate electrode filling the recess pattern, a threshold voltage adjusting layer formed in the substrate under the recess pattern, a source/drain region formed in the substrate on both sides of the gate electrode and a gate insulation layer, with the recess pattern being disposed between the gate electrode and the substrate, wherein the thickness of the gate insulation layer formed in a region adjacent to the source/drain region is greater than the thickness of the gate insulation layer formed in a region adjacent to the threshold voltage adjusting layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile