The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Dec. 08, 2008
BO Youn Kim, Seoul, KR;
Bo Youn Kim, Seoul, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
An SOI device includes an SOI substrate having a stacked structure including a buried oxide layer and a first silicon layer sequentially stacked on a silicon substrate. The SOI substrate possesses grooves having a depth that extends from an upper surface of the first silicon layer to a partial depth of the buried oxide layer. An insulation layer is formed on the lower surfaces of the grooves and a second silicon layer is formed filling the grooves having the insulation layer formed thereon. Gates are formed on the second silicon layer and junction regions are formed in the first silicon layer on both sides of the gates to contact the insulation layer.