The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
May. 02, 2011
Kenichi Suzaki, Toyama, JP;
Jie Wang, Toyama, JP;
Kenichi Suzaki, Toyama, JP;
Jie Wang, Toyama, JP;
Hitachi Kokusai Electric, Inc., Tokyo, JP;
Abstract
A process for producing a semiconductor device, comprising the steps of conducting film formation on substrate () in reactor (); and unloading the substrate () after film formation from the reactor () and thereafter effecting forced air cooling of the interior of the reactor () while the substrate () is absent in the reactor (). The stress of deposited film adhering in the reactor () is increased over that exhibited at air cooling without blower so as to positively generate thermal stress with the result that the deposited film would undergo forced cracking over that exhibited at air cooling without blower. Microparticles scattered by the cracking are efficiently discharged from the reactor forcibly through purging in the reactor in the state of atmospheric pressure.