The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Dec. 31, 2009
Applicant:
IN Soo Wang, Chungcheongbuk-do, KR;
Inventor:
In Soo Wang, Chungcheongbuk-do, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract
A nonvolatile memory device includes a high voltage generation unit configured to generate a program voltage and a pass voltage, a block selection unit coupled to the high voltage generation unit through global word lines, a memory cell array coupled to the block selection unit through word lines, a discharge unit coupled to the global word lines and configured to change a level of voltage supplied to the global word lines, and a discharge control unit configured to generate a discharge signal, and transfer the discharge signal to the discharge unit in response to the program voltage.