The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Sep. 09, 2008
Anosh B. Davierwalla, San Diego, CA (US);
Cheng Zhong, San Diego, CA (US);
Dongkyu Park, San Diego, CA (US);
Mohamed Hassan Abu-rahma, San Diego, CA (US);
Mehdi Hamidi Sani, Rancho Santa Fe, CA (US);
Sei Seung Yoon, San Diego, CA (US);
Anosh B. Davierwalla, San Diego, CA (US);
Cheng Zhong, San Diego, CA (US);
Dongkyu Park, San Diego, CA (US);
Mohamed Hassan Abu-Rahma, San Diego, CA (US);
Mehdi Hamidi Sani, Rancho Santa Fe, CA (US);
Sei Seung Yoon, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
In a particular embodiment, a memory device is disclosed that includes a memory cell including a resistance-based memory element coupled to an access transistor. The access transistor has a first oxide thickness to enable operation of the memory cell at an operating voltage. The memory device also includes a first amplifier configured to couple the memory cell to a supply voltage that is greater than a voltage limit to generate a data signal based on a current through the memory cell. The first amplifier includes a clamp transistor that has a second oxide thickness that is greater than the first oxide thickness. The clamp transistor is configured to prevent the operating voltage at the memory cell from exceeding the voltage limit.