The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8228708 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 24, 2012

Filed:

Aug. 31, 2011
Applicants:

Yukihiro Kaneko, Osaka, JP;

Hiroyuki Tanaka, Kyoto, JP;

Michihito Ueda, Kyoto, JP;

Inventors:

Yukihiro Kaneko, Osaka, JP;

Hiroyuki Tanaka, Kyoto, JP;

Michihito Ueda, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

In the operating method of the semiconductor memory device, (1) voltages V, V, Vs, and Vd, which satisfy V>Vs, V>Vd, V>Vs, and V>Vd, are applied to a first gate electrode, a second gate electrode, a source electrode, and a drain electrode to write a first resistance value, respectively, (2) the voltages V, V, Vs, and Vd, which satisfy V>Vs, V>Vd, V<Vs, and V<Vd, are applied to write a second resistance value, and (3) the voltages V, V, Vs, and Vd, which satisfy V<Vs, V<Vd, V<Vs, and V<Vd, are applied to write a third resistance value.


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Kaneko, Yukihiro. (2012). Semiconductor memory device and a method of operating thereof (U.S. Patent No. 8228708). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8228708

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