The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Oct. 30, 2009
Virgile Javerliac, Grenoble, FR;
Mourad El Baraji, Saint Martin d'Heres, FR;
Virgile Javerliac, Grenoble, FR;
Mourad El Baraji, Saint Martin d'Heres, FR;
Crocus Technology SA, Grenoble, FR;
Abstract
A method for writing a magnetic random access memory-based ternary content addressable memory cell comprising a first magnetic tunnel junction being formed from a storage layer, a sense layer having a magnetization direction adjustable relative to the magnetization of the storage layer, and an insulating layer between the storage and sense layers; a sense line coupled with the storage layer; a first field line and a second field line, and the first field line being orthogonal to the second field line; comprising: providing a first write data to said storage layer via the second field line to store a first stored data with a high or low logic state; characterized in that, the method further comprises providing the first write data to said storage layer via the first field line to store the first stored data with a masked logic state.