The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Oct. 23, 2008
Joon Young Yang, Bucheon-si, KR;
Jung IL Lee, Anyang-si, KR;
Jeong OH Kim, Seoul, KR;
Yu Kyeong Ahn, Seoul, KR;
Young Kwon Kang, Suwon-si, KR;
Sang Jin Lee, Gunpo-si, KR;
Jung Ho Bang, Paju-si, KR;
Joon Young Yang, Bucheon-si, KR;
Jung Il Lee, Anyang-si, KR;
Jeong Oh Kim, Seoul, KR;
Yu Kyeong Ahn, Seoul, KR;
Young Kwon Kang, Suwon-si, KR;
Sang Jin Lee, Gunpo-si, KR;
Jung Ho Bang, Paju-si, KR;
LG Display Co., Ltd., Seoul, KR;
Abstract
The present invention relates a method for forming a pattern includes the steps of forming a thin film on a substrate, coating a photoresist film on the thin film, aligning a mask over the photoresist film, the mask formed on a base material, including a light shielding portion having a linear supporting portion and an uneven portion at a boundary of the supporting portion, and a transmission portion defined at regions excluding the light shielding portion, exposing the photoresist film with the mask thereon to a UV beam of a wavelength greater than 300nm to cause refraction in the vicinity of the uneven portion, and developing the photoresist film exposed thus to form a photoresist film pattern, and patterning the thin film by using the photoresist film pattern thus formed.