The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2012

Filed:

May. 20, 2008
Applicant:

Patrick A. Quinn, Beaverton, OR (US);

Inventor:

Patrick A. Quinn, Beaverton, OR (US);

Assignee:

Avnera Corporation, Beaverton, OR (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/56 (2006.01);
U.S. Cl.
CPC ...
Abstract

A circuit architecture, or topology, that provides a level shifter substantially independent of the duty cycle of an input signal includes an H-bridge arrangement of field effect transistors, a pair of capacitively coupled input terminals connected to the gates of the high-side transistors and circuitry to set the bias voltage at the gates of the high-side transistors, wherein the bias voltage generation circuitry receives at least information indicative of both the H-bridge power supply voltage and the modulation of the input signal. Various embodiments include a switchable element coupled in series with a voltage divider portion in the bias voltage generation circuitry. The ratio of on to off time of the switchable element determines the average current through the voltage divider and thus the bias voltage. To prevent excessive short-circuit current flow through the high-side transistors, the switchable elements are turned off responsive to detection of a short-circuit condition.


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