The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Feb. 11, 2010
Youngok Kim, Suwon-si, KR;
Jeongnam Han, Seoul, KR;
Changki Hong, Seongnam-si, KR;
Boun Yoon, Seoul, KR;
Kuntack Lee, Suwon-si, KR;
Young-hoo Kim, Seongnam-si, KR;
Youngok Kim, Suwon-si, KR;
Jeongnam Han, Seoul, KR;
Changki Hong, Seongnam-si, KR;
Boun Yoon, Seoul, KR;
Kuntack Lee, Suwon-si, KR;
Young-Hoo Kim, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
The inventive concept provides a wafer test method and a wafer test apparatus. The wafer test method can recognize the amount of residuals generated in a sidewall of the metal-containing layer pattern and the extent of corrosion of a sidewall of the metal-containing layer pattern using the measured electric resistance by supplying an electrolyte so that the electrolyte is in contact with a portion of the metal-containing layer pattern in a predetermined chip region and measuring an electric resistance between a first electrode which is electrically in contact with the other portion of the metal-containing layer pattern and a second electrode which is in contact with the electrolyte in the predetermined region. Thus, a wafer test method and a wafer test apparatus can be embodied by an in-line method without dividing a wafer into each chip.