The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Jul. 14, 2010
Shinji Tokuyama, Osaka, JP;
Masahiro Adachi, Osaka, JP;
Takashi Kyono, Itami, JP;
Yoshihiro Saito, Yokohama, JP;
Shinji Tokuyama, Osaka, JP;
Masahiro Adachi, Osaka, JP;
Takashi Kyono, Itami, JP;
Yoshihiro Saito, Yokohama, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A semiconductor device has a satisfactory ohmic contact on a p-type principal surface tilting from a c-plane. The principal surfaceof a p-type semiconductor regionextends along a plane tilting from a c-axis (axis <0001>) of hexagonal group-III nitride. A metal layeris deposited on the principal surfaceof the p-type semiconductor region. The metal layerand the p-type semiconductor regionare separated by an interfacesuch that the metal layer functions as a non-alloy electrode. Since the hexagonal group-III nitride contains gallium as a group-III element, the principal surfacecomprising the hexagonal group-III nitride is more susceptible to oxidation compared to the c-plane of the hexagonal group-III nitride. The interfaceavoids an increase in amount of oxide after the formation of the metal layerfor the electrode.