The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2012

Filed:

Jan. 31, 2006
Applicants:

Hubert Enichlmair, Graz, AT;

Jochen Kraft, Oberaich, AT;

Bernhard Löffler, Gleisdorf, AT;

Gerald Meinhardt, Graz, AT;

Georg Röhrer, Graz, AT;

Ewald Wachmann, Kainbach, AT;

Inventors:

Hubert Enichlmair, Graz, AT;

Jochen Kraft, Oberaich, AT;

Bernhard Löffler, Gleisdorf, AT;

Gerald Meinhardt, Graz, AT;

Georg Röhrer, Graz, AT;

Ewald Wachmann, Kainbach, AT;

Assignee:

austriamicrosystems AG, Unterpremstätten, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2006.01);
U.S. Cl.
CPC ...
Abstract

A light-sensitive component which has a semiconductor junction between a thin relatively highly doped epitaxial layer and a relatively lightly doped semiconductor substrate. Outside a light incidence window, an insulating layer is arranged between epitaxial layer and semiconductor substrate. In this case, the thickness of the epitaxial layer is less than 50 nm, with the result that a large proportion of the light quanta incident in the light incidence window can be absorbed in the lightly doped semiconductor substrate.


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