The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Dec. 04, 2009
Ki-hwan Kim, Anyang-si, KR;
Young-bae Kim, Seoul, KR;
Seung-ryul Lee, Seoul, KR;
Young-soo Park, Yongin-si, KR;
Chang-jung Kim, Yongin-si, KR;
Bo-soo Kang, Seoul, KR;
Ki-hwan Kim, Anyang-si, KR;
Young-bae Kim, Seoul, KR;
Seung-ryul Lee, Seoul, KR;
Young-soo Park, Yongin-si, KR;
Chang-jung Kim, Yongin-si, KR;
Bo-soo Kang, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Example embodiments relate to a heterojunction diode, a method of manufacturing the heterojunction diode, and an electronic device including the heterojunction diode. The heterojunction diode may include a first conductive type non-oxide layer and a second conductive type oxide layer bonded to the non-oxide layer. The non-oxide layer may be a Si layer. The Si layer may be a p++ Si layer or an n++ Si layer. A difference in work functions of the non-oxide layer and the oxide layer may be about 0.8-1.2 eV. Accordingly, when a forward voltage is applied to the heterojunction diode, rectification may occur. The heterojunction diode may be applied to an electronic device, e.g., a memory device.