The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Jan. 31, 2011
Daisuke Ichikawa, Kyoto, JP;
Daisuke Ichikawa, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A semiconductor device according to the present invention includes a semiconductor substrate of a first conductivity type having a top surface and a rear surface, a semiconductor layer of a second conductivity type formed on the top surface of the semiconductor substrate, having a top surface and a rear surface, and having the rear surface in contact with the top surface of the semiconductor substrate, a body region of the first conductivity type formed in a top layer portion of the semiconductor layer, a first impurity region of the second conductivity type formed in a top layer portion of the semiconductor layer and spaced apart from the body region, a second impurity region of the second conductivity type formed in a top layer portion of the body region and spaced apart from a peripheral edge of the body region, a gate electrode formed on the semiconductor layer and opposed to a portion between the peripheral edge of the body region and a peripheral edge of the second impurity region, a field insulating film formed in a portion of the top surface of the semiconductor layer between the body region and the first impurity region, and a plurality of field plates formed on the field insulating film and spaced apart from each other, and a spacing between adjacent field plates decreases as the body region is approached from the first impurity region.