The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8227859 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 24, 2012

Filed:

Jun. 26, 2009
Applicants:

Jin-yul Lee, Gyeonggi-do, KR;

Dong-seok Kim, Gyeonggi-do, KR;

Inventors:

Jin-Yul Lee, Gyeonggi-do, KR;

Dong-Seok Kim, Gyeonggi-do, KR;

Assignee:

Hynix Semiconductor Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a step-type recess pattern formed in a substrate, a gate electrode buried in the recess pattern and having a gap disposed between the gate electrode and upper sidewalls of the recess pattern, an insulation layer filling the gap, and a source and drain region formed in a portion of the substrate at two sides of the recess pattern. The semiconductor device is able to secure a required data retention time by suppressing the increase of leakage current caused by the reduction of a design rule.


Find Patent Forward Citations

Lee, Jin-Yul. (2012). Semiconductor device and method for fabricating the same (U.S. Patent No. 8227859). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8227859

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