The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Mar. 12, 2008
Applicant:
Pierre Goarin, Graz, BE;
Inventor:
Pierre Goarin, Graz, BE;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A planar extended drain transistor () is provided which comprises a control gate (), a drain region (), a channel region (), and a drift region (), wherein the drift region () is arranged between the channel region () and the drain region (). Furthermore, the control gate () is at least partially buried into the channel region () and the drift region () comprises a doping material density which is lower than the doping material density of the drain region ().