The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Nov. 07, 2007
Syotaro Ono, Kanagawa-ken, JP;
Wataru Saito, Kanagawa-ken, JP;
Masakatsu Takashita, Kanagawa-ken, JP;
Yasuto Sumi, Kanagawa-ken, JP;
Masaru Izumisawa, Kanagawa-ken, JP;
Hiroshi Ohta, Tokyo, JP;
Syotaro Ono, Kanagawa-ken, JP;
Wataru Saito, Kanagawa-ken, JP;
Masakatsu Takashita, Kanagawa-ken, JP;
Yasuto Sumi, Kanagawa-ken, JP;
Masaru Izumisawa, Kanagawa-ken, JP;
Hiroshi Ohta, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes: a drift layer having a superjunction structure; a semiconductor base layer selectively formed in a part of one surface of the drift layer; a first RESURF layer formed around a region having the semiconductor base layer formed thereon; a second semiconductor RESURF layer of a conductivity type which is opposite to a conductivity type of the first semiconductor RESURF layer; a first main electrode connected to a first surface of the drift layer; and a second main electrode connected to a second surface of the drift layer. The first RESURF layer is connected to the semiconductor base layer. The second semiconductor RESURF layer is in contact with the first semiconductor RESURF layer.