The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Feb. 17, 2009
Applicants:
Francois Neuilly, Colomby-sur-Thaon, FR;
Francois Le Cornec, Luc sur Mer, FR;
Inventors:
Francois Neuilly, Colomby-sur-Thaon, FR;
Francois Le Cornec, Luc sur Mer, FR;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/92 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention describes an ultra High-Density Capacitor design, integrated in a semiconductor substrate, preferably a Si substrate, by using both wafer sides. The capacitors are pillar-shaped and comprise electrodes () separated by a dielectric layer (). Via connections () are provided in trenches that go through the whole thickness of the wafer.