The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Jan. 10, 2008
Markus Müller, Eindhoven, NL;
Grógory Bidal, Grenoble, FR;
Markus Müller, Eindhoven, NL;
Grógory Bidal, Grenoble, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
NXP B.V. (Dutch Corporation), Ag Eindhoven, NL;
Abstract
A method of forming a field effect transistor comprising a gate formed on an insulating layer, the gate having, in a zone in contact with the insulating layer, a semiconducting central zone and lateral zones in the length of the gate, the method comprising forming a gate comprising a portion of insulating layer, a portion of semiconducting layer formed over the insulating layer, and a portion of mask layer formed over the semiconducting layer; performing an etching of the portion of the mask layer such that only a portion in the center of the gate remains; and reacting the semiconducting gate with a metal deposited over the gate.