The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Dec. 10, 2007
Shiro Yamazaki, Aichi, JP;
Makoto Iwai, Nagoya, JP;
Takanao Shimodaira, Nagoya, JP;
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Suita, JP;
Fumio Kawamura, Suita, JP;
Shiro Yamazaki, Aichi, JP;
Makoto Iwai, Nagoya, JP;
Takanao Shimodaira, Nagoya, JP;
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Suita, JP;
Fumio Kawamura, Suita, JP;
Toyoda Gosei Co., Ltd., Nishikasugai-Gun, Aichi-Ken, JP;
NGK Insulators, Ltd., Nagoya-Shi, Aichi, JP;
Osaka University, Suita-Shi, Osaka, JP;
Abstract
A GaN single crystalis grown on a crystal growth surface of a seed crystal (GaN layer) through the flux method in a nitrogen (N) atmosphere at 3.7 MPa and 870° C. employing a flux mixture including Ga, Na, and Li at about 870° C. Since the back surface of the templateis R-plane of the sapphire substrate, the templateis readily corroded or dissolved in the flux mixture from the back surface thereof. Therefore, the templateis gradually dissolved or corroded from the back surface thereof, resulting in separation from the semiconductor or dissolution in the flux. When the GaN single crystalis grown to a sufficient thickness, for example, about 500 μm or more, the temperature of the crucible is maintained at 850° C. to 880° C., whereby the entirety of the sapphire substrateis dissolved in the flux mixture.