The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8227316 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 24, 2012

Filed:

Jun. 29, 2006
Applicants:

Huilong Zhu, Poughkeepsie, NY (US);

Oleg Gluschenkov, Poughkeepsie, NY (US);

Jing Wang, Beacon, NY (US);

Inventors:

Huilong Zhu, Poughkeepsie, NY (US);

Oleg Gluschenkov, Poughkeepsie, NY (US);

Jing Wang, Beacon, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A finFet controls conduction channel conditions using one of two gate structures, preferably having a gate length shorter than the other gate structure to limit capacitance, which are opposed across the conduction channel. An asymmetric halo impurity implant performed at an angle adjacent to the gate structure for controlling conduction channel conditions forms a super steep retrograde well to limit short channel effects in the portion of the conduction channel which is controlled by the other gate structure.


Find Patent Forward Citations

Zhu, Huilong. (2012). Method for manufacturing double gate finfet with asymmetric halo (U.S. Patent No. 8227316). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8227316

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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