The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Aug. 15, 2007
Hisayuki Miki, Chiba, JP;
Kenzo Hanawa, Ichihara, JP;
Yasumasa Sasaki, Kamakura, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
The present invention provides a group-III nitride compound semiconductor light-emitting device having high productivity and good emission characteristics, a method of manufacturing a group-III nitride compound semiconductor light-emitting device, and a lamp. A method of manufacturing a group-III nitride compound semiconductor light-emitting device includes a step of forming on a substratea semiconductor layer made of a group-III nitride compound semiconductor including Ga as a group-III element using a sputtering method. The substrateand a sputtering target are arranged so as to face each other, and a gap between the substrateand the sputtering target is in the range of 20 to 100 mm. In addition, when the semiconductor layer is formed by the sputtering method, a bias of more than 0.1 W/cmis applied to the substrate. Further, when the semiconductor layer is formed, nitrogen and argon are supplied into a chamber used for sputtering.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile