The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8227281 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 24, 2012

Filed:

Sep. 02, 2010
Applicants:

Satoshi Okada, Hadano, JP;

Hiroyuki Kato, Yokohama, JP;

Naochika Horio, Yokohama, JP;

Inventors:

Satoshi Okada, Hadano, JP;

Hiroyuki Kato, Yokohama, JP;

Naochika Horio, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/16 (2006.01);
U.S. Cl.
CPC ...
Abstract

A manufacture method for a ZnO-based light emitting device, includes the steps of: forming a ZnO-based semiconductor layer of a first conductivity type above a substrate; two-dimensionally growing a first ZnO-based semiconductor layer of a second conductivity type opposite to the first conductivity type above the ZnO-based semiconductor layer of the first conductivity type; and three-dimensionally growing a second ZnO-based semiconductor layer of the second conductivity type on the first ZnO-based semiconductor layer of the second conductivity type.


Find Patent Forward Citations

Okada, Satoshi. (2012). Manufacture method for zno-based light emitting device (U.S. Patent No. 8227281). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8227281

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