The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Jun. 30, 2008
Applicant:
Sung-kwon Lee, Ichon-shi, KR;
Inventor:
Sung-Kwon Lee, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method is used in forming a fine pattern in a semiconductor device. The method includes forming an etch target layer; forming a photoresist pattern over the etch target layer; forming a polymer pattern including silicon-oxygen (Si—O) bonds on sidewalls of the photoresist pattern; removing the photoresist pattern; and etching the etch target layer using the polymer pattern as an etch mask.