The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Feb. 18, 2010
Yongjin Chun, Daejeon, KR;
Soohan Choi, Seoul, KR;
Sangwook Kim, Yongin-si, KR;
Seongwoon Choi, Suwon-si, KR;
Sukjoo Lee, Yongin-si, KR;
Sungwoo Lee, Suwon-si, KR;
Youngchang Kim, Seoul, KR;
Sungsoo Suh, Yongin-si, KR;
Jin-sun Choi, Gimpo-si, KR;
YongJin Chun, Daejeon, KR;
Soohan Choi, Seoul, KR;
Sangwook Kim, Yongin-si, KR;
Seongwoon Choi, Suwon-si, KR;
Sukjoo Lee, Yongin-si, KR;
Sungwoo Lee, Suwon-si, KR;
Youngchang Kim, Seoul, KR;
SungSoo Suh, Yongin-si, KR;
Jin-sun Choi, Gimpo-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Methods of forming masks. According to the methods, a target pattern is set. Generation of a side lobe caused by the target pattern is verified. A preliminary target pattern and a preliminary side lobe pattern are set, in the target pattern and a region where the side lobe is generated, respectively. An interference pattern map using the preliminary target pattern and the preliminary side lobe pattern is created. At least one of regions having a phase identical or opposite to that of a position of the preliminary target pattern in the interference pattern map is set to an interference auxiliary pattern. A mask using the interference auxiliary pattern and the target pattern is formed.