The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 24, 2012

Filed:

Jul. 11, 2007
Applicants:

Miki Egami, Kitakyushu, JP;

Akira Nakashima, Kitakyushu, JP;

Michio Komatsu, Kawasaki, JP;

Inventors:

Miki Egami, Kitakyushu, JP;

Akira Nakashima, Kitakyushu, JP;

Michio Komatsu, Kawasaki, JP;

Assignee:

JGC Catalysts and Chemicals Ltd., Kawasaki-shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 3/02 (2006.01); B05D 3/04 (2006.01); H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming on a substrate an amorphous silica-based coating film having a low dielectric constant of 3.0 or below and a film strength (Young's modulus) of 3.0 GPa or more, which comprises, as a typical one, the steps of; (a) coating on the substrate a liquid composition containing hydrolysate of an organic silicon compound or compounds hydrolyzed in the presence of tetraalkylammonium hydroxide (TAAOH); (b) setting the substrate in a chamber and then drying a coating film formed on the substrate at a temperature in the range from 25 to 340° C.; (c) heating the coating film at a temperature in the range from 105 to 450° C. with introduction of a superheated steam having such a temperature into the chamber, and (d) curing the coating film at a temperature in the range from 350 to 450° C. with introduction of a nitrogen gas into the chamber.


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