The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Oct. 20, 2008
Yeonjoon Park, Yorktown, VA (US);
Sang H. Choi, Poquoson, VA (US);
Glen C. King, Yorktown, VA (US);
James R. Elliott, Yorktown, VA (US);
Yeonjoon Park, Yorktown, VA (US);
Sang H. Choi, Poquoson, VA (US);
Glen C. King, Yorktown, VA (US);
James R. Elliott, Yorktown, VA (US);
Abstract
'Super-hetero-epitaxial' combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a 'Tri-Unity' system. New bandgap engineering diagrams are provided for each class of combination, based on determination of hybrid lattice constants for the constituent materials in accordance with lattice-matching equations. Using known bandgap figures for previously tested materials, new materials with lattice constants that match desired substrates and have the desired bandgap properties may be formulated by reference to the diagrams and lattice matching equations. In one embodiment, this analysis makes it possible to formulate new super-hetero-epitaxial semiconductor systems, such as systems based on group IV alloys on c-plane LaF; group IV alloys on c-plane langasite; Group III-V alloys on c-plane langasite; and group II-VI alloys on c-plane sapphire.