The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Nov. 20, 2008
Anxiao Jiang, College Station, TX (US);
Moshe Schwartz, Rehovot, IL;
Jehoshua Bruck, La Canada, CA (US);
Anxiao Jiang, College Station, TX (US);
Moshe Schwartz, Rehovot, IL;
Jehoshua Bruck, La Canada, CA (US);
California Institute of Technology, Pasadena, CA (US);
Texas A&M University System, College Station, TX (US);
Abstract
We investigate error-correcting codes for a novel storage technology, which we call the rank-modulation scheme. In this scheme, a set of n cells stores information in the permutation induced by the different levels of the individual cells. The resulting scheme eliminates the need for discrete cell levels, and overshoot errors when programming cells (a serious problem that reduces the writing speed), as well as mitigates the problem of asymmetric errors. In this discussion, the properties of error correction in rank modulation codes are studied. We show that the adjacency graph of permutations is a subgraph of a multi-dimensional array of a special size, a property that enables code designs based on Lee-metric codes and L-metric codes. We present a one-error-correcting code whose size is at least half of the optimal size. We also present additional error-correcting codes and some related bounds.