The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Dec. 04, 2008
Kosuke Tanaka, Tokyo, JP;
Seiichi Takayama, Tokyo, JP;
Satoshi Tomikawa, Tokyo, JP;
TDK Corporation, Tokyo, JP;
Abstract
Provided is a method for forming a near-field light generating element, which is capable of sufficiently suppressing the unevenness of a waveguide surface and the distortion within the waveguide. The forming method comprises the steps of: forming a first etching stopper layer on a lower waveguide layer; forming a second etching stopper layer; forming, on the second etching stopper layer, a plasmon antenna material layer; performing etching with the second etching stopper layer used as a stopper, to form a first side surface of plasmon antenna; forming a side-surface protecting mask so as to cover the first side surface; and performing etching with the first and second etching stopper layers used as stoppers, to form the second side surface. By providing the first and second etching stopper layer, over-etching can be prevented even when each etching process takes enough etch time, which allows easy management of etching endpoints.