The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2012

Filed:

Sep. 22, 2009
Applicants:

Vivian Pistre, Beijing, CN;

Gongrui Yan, Beijing, CN;

Bikash K. Sinha, Cambridge, MA (US);

Romain Prioul, Cambridge, MA (US);

Inventors:

Vivian Pistre, Beijing, CN;

Gongrui Yan, Beijing, CN;

Bikash K. Sinha, Cambridge, MA (US);

Romain Prioul, Cambridge, MA (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01V 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods and systems for analyzing subterranean formations in-situ stress are disclosed. A method for extracting geological horizon on-demand from a 3D seismic data set, comprises receiving sonic log data; computing the anisotropic shear moduli C, Cand C; determining in-situ stress type and selecting an in-situ stress expression corresponding to the in-situ stress type; computing stress regime factor Q of the formation interval; and computing and outputting the maximum stress σby using the stress regime factor Q, Vertical stress σand Minimum horizontal stress σ.


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