The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Mar. 22, 2010
Man-jong Yu, Suwon-si, KR;
Man-Jong Yu, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A semiconductor device includes an insulation interlayer and an etch stop layer sequentially stacked on a substrate wherein a lower structure including a first contact pad is formed. A second contact pad penetrates the insulation interlayer and the etch stop layer and is connected to the first contact pad. The second contact pad protrudes from the etch stop layer. A pad spacer is provided between the second contact pad and the insulation interlayer. A lower electrode is provided on the etch stop layer and is connected to the second contact pad. A dielectric layer and an upper electrode are sequentially provided on the lower electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile