The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Nov. 19, 2008
Applicants:
Yu Sin Kim, Daejeon-si, KR;
Chang Seok Lee, Daejeon-si, KR;
Nam Jin OH, Daejeon-si, KR;
Shinichi Iizuka, Suwon-si, KR;
Inventors:
Yu Sin Kim, Daejeon-si, KR;
Chang Seok Lee, Daejeon-si, KR;
Nam Jin Oh, Daejeon-si, KR;
Shinichi Iizuka, Suwon-si, KR;
Assignee:
Samsung Electro-Mechanics Co., Ltd., Gyunggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a CMOS RF IC comprises an inductor that is formed in the uppermost two or more metal layers among a plurality of metal layers; and a DC bias circuit that is formed in a metal layer provided at the bottom of the metal layers in which the inductor is formed.