The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Feb. 08, 2007
Kazuaki Tsutsumi, Kyoto, JP;
Norikazu Ito, Kyoto, JP;
Masayuki Sonobe, Kyoto, JP;
Shinichi Tamai, Kyoto, JP;
Kazuaki Tsutsumi, Kyoto, JP;
Norikazu Ito, Kyoto, JP;
Masayuki Sonobe, Kyoto, JP;
Shinichi Tamai, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A semiconductor light emitting device of the present invention includes a substrate (), an n-GaN layer () supported by the substrate (), a p-GaN layer () which is located farther from the substrate () than the n-GaN layer () is, an active layer () formed between the n-GaN layer () and the p-GaN layer () and containing InGaN, a sublimation preventing layer () formed between the active layer () and the p-GaN layer () and containing InGaN, and an In composition gradient layer () sandwiched between the sublimation preventing layer () and the p-GaN layer () and having such In composition ratio gradient that the In composition ratio decreases in the thickness direction toward the p-GaN layer ().