The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2012

Filed:

Feb. 09, 2010
Applicants:

Katsumi Matsumoto, Mobara, JP;

Hideki Nakagawa, Chiba, JP;

Yoshiharu Owaku, Mobara, JP;

Terunori Saitou, Mobara, JP;

Toshio Miyazawa, Chiba, JP;

Takahiro Kamo, Shibuya, JP;

Takuo Kaitoh, Mobara, JP;

Inventors:

Katsumi Matsumoto, Mobara, JP;

Hideki Nakagawa, Chiba, JP;

Yoshiharu Owaku, Mobara, JP;

Terunori Saitou, Mobara, JP;

Toshio Miyazawa, Chiba, JP;

Takahiro Kamo, Shibuya, JP;

Takuo Kaitoh, Mobara, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 31/036 (2006.01); H01L 31/0376 (2006.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A display device having a photosensor which exhibits excellent photoelectric conversion efficiency is provided. In a display device which forms photosensors on a substrate thereof, the photosensor is formed by sequentially stacking a gate electrode, a gate insulation film and a semiconductor layer in such an order or in an opposite order from a substrate side, and electrodes are connected to both sides of the semiconductor layer respectively, the semiconductor layer is formed of a stacked body consisting of a crystalline semiconductor layer and an amorphous semiconductor layer, and the crystalline semiconductor layer is arranged on the gate insulation film side.


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