The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Aug. 04, 2009
Applicants:
Tatsuyuki Shinagawa, Tokyo, JP;
Hirotatsu Ishii, Tokyo, JP;
Akihiko Kasukawa, Tokyo, JP;
Inventors:
Assignee:
Furukawa Electric Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
Abstract
An interfacial reaction suppressing layerformed between an oxide layer including a ZnO single crystal substrateand a nitride layer including an InGaN semiconductor layerrestrains the interfacial reaction between the oxide layer and the nitride layer and formation of a reaction layer (AlZnO) at the interface, which makes it possible to grow and thermally treat the InGaN semiconductor layerat a high temperature. Thus, a crystal quality of the InGaN semiconductor layeris improved.