The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Jun. 29, 2006
Takayuki Enda, Fukushima-ken, JP;
Masayuki Moriya, Fukushima-ken, JP;
Takayuki Enda, Fukushima-ken, JP;
Masayuki Moriya, Fukushima-ken, JP;
Spansion LLC, Sunnyvale, CA (US);
Abstract
The present invention provides a method of fabricating a semiconductor device including forming stop layers () that include silicon oxy-nitride films above a semiconductor substrate, forming a cover film () between and on the stop layers, in which a top surface of the cover film above a region between the stop layers is higher than top surfaces of the stop layers, and polishing the cover film to the stop layers by using ceria slurry, and also provides a semiconductor device including metal layers () provided above a semiconductor substrate, silicon oxy-nitride films () provided on the metal layers, and an embedded layer () provided between the metal layers to have a top surface substantially coplanar with top surfaces of the silicon oxy-nitride films. According to the present invention, it is possible to provide a semiconductor device having a film of excellent planarization on a surface thereof and fabrication method therefor.