The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Oct. 17, 2007
Takuya Futase, Tokyo, JP;
Takeshi Hayashi, Tokyo, JP;
Takuya Futase, Tokyo, JP;
Takeshi Hayashi, Tokyo, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
An object of the invention is to avoid an inconvenience at a connection portion formed by filling a metal film in a connecting hole, which has been opened in an insulating film, via a barrier metal film having a titanium nitride film stacked over a titanium film. A manufacturing method of a semiconductor device has the steps of: forming a thermal reaction Ti film over the bottom of a connecting hole by a thermal reaction using a TiClgas; forming a plasma reaction Ti film by a plasma reaction using a TiClgas; forming a nitrogen-rich TiN film over the surface of the plasma reaction Ti film by plasma treatment with Hand plasma treatment with NHgases; repeatedly carrying out film formation by CVD using a WFgas and reduction using an SiHor BHgas to form a tungsten nucleation film of a multilayer structure over the nitrogen-rich TiN film; and forming a blanket•tungsten film at 400° C. or less by CVD using WFand Hgases. This makes it possible to avoid an inconvenience at a connection portion formed by filling a metal film in a connecting hole, which has been opened in an insulating film, via a barrier metal film having a titanium nitride film stacked over a titanium film.