The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Jun. 28, 2007
Applicant:
Kyoung-bong Rouh, Goyang-si, KR;
Inventor:
Kyoung-Bong Rouh, Goyang-si, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/336 (2006.01); H01L 21/76 (2006.01); H01L 27/148 (2006.01); H01L 29/66 (2006.01); H01L 21/70 (2006.01); H01L 27/088 (2006.01); H01L 23/31 (2006.01); H01L 21/304 (2006.01);
U.S. Cl.
CPC ...
Abstract
A MOS transistor suppressing a short channel effect includes a substrate, a first diffusion region and a second diffusion region separated from each other by a channel region in an upper portion of the substrate, a gate insulating layer including a first gate insulating layer disposed on a surface of the substrate in the channel region and a second gate insulating layer having a specified depth from the surface of the substrate to be disposed between the first diffusion region and the channel region, and a gate electrode disposed on the first gate insulating layer.