The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Oct. 27, 2008
Fang-chen Luo, Hsinchu, TW;
Shuo-wei Liang, Taipei County, TW;
Shin-chuan Chiang, Taipei, TW;
Chao-nan Chen, Nantou County, TW;
Chin-chih Yu, Hsinchu, TW;
Fang-Chen Luo, Hsinchu, TW;
Shuo-Wei Liang, Taipei County, TW;
Shin-Chuan Chiang, Taipei, TW;
Chao-Nan Chen, Nantou County, TW;
Chin-Chih Yu, Hsinchu, TW;
Taiwan TFT LCD Association, Hsinchu, TW;
Chunghwa Picture Tubes, Ltd., Taoyuan, TW;
Au Optronics Corporation, Hsinchu, TW;
Hannstar Display Corporation, New Taipei, TW;
Chi Mei Optoelectronics Corporation, Tainan County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method for fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate. A metal oxide material layer is formed on the gate insulating layer. A photoresist layer is formed on the metal oxide material layer, in which a thickness of the photoresist layer above the gate is larger than that of the photoresist layer above two sides adjacent to the gate. A portion of the metal oxide material layer is removed to form a metal oxide active layer by using the photoresist layer as a mask. The photoresist layer above the two sides adjacent to the gate is removed and the remaining photoresist layer covers a portion of the metal oxide active layer. A source and a drain are formed on the metal oxide active layer covered by the photoresist layer.