The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
May. 17, 2010
Kuniaki Ishihara, Yokohama, JP;
Kuniaki Ishihara, Yokohama, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A method for producing a semiconductor optical device, includes the steps of: forming a semiconductor region including a semiconductor layer on a substrate; preparing a mold including a pattern surface, the pattern surface including an arrangement of patterns each including first to n-th pattern portions; forming a first mask on the semiconductor region with the mold by a nano-imprint technique; forming first to n-th periodic structures in each of the device sections in the semiconductor region by using the first mask, the first to n-th periodic structures respectively corresponding to the first to n-th pattern portions; forming a second mask after the first mask is removed, the second mask including a first pattern on an i-th periodic structure (1≦i≦n) among the first to n-th periodic structures in a first section of the device sections and including a second pattern on a j-th periodic structure (1≦j≦n) among the first to n-th periodic structures in a second section of the device sections; and forming first and second stripe mesas in the first and second sections respectively by using the second mask.