The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Dec. 30, 2008
Guee Hwang Sim, Icheon-si, KR;
Guee Hwang Sim, Icheon-si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
The present invention relates to a method of manufacturing semiconductor devices. According to the method, an etch target layer, a chemically amplified photoresist layer, and an Anti-Reflective Coating (ARC) layer are first sequentially formed over a semiconductor substrate. An exposure process is performed in order to form exposure portions in the photoresist layer. A thermal process is performed so that a decrosslinking reaction is generated in the ARC layer on the exposure portions. A development process is performed in order to form photoresist layer patterns and ARC layer patterns by removing the ARC layer at portions in which the decrosslinking reaction has occurred and the exposure portions. A silylation process is performed in order to form silylation patterns on sidewalls of each of the photoresist layer patterns. The ARC layer patterns and the photoresist layer patterns are removed. The etch target layer is patterned using the silylation patterns as an etch mask.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile