The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2012

Filed:

Dec. 28, 2009
Applicants:

Toshiyuki Suzuki, Tokyo, JP;

Masahiro Hashimoto, Tokyo, JP;

Kazunori Ono, Tokyo, JP;

Ryo Ohkubo, Tokyo, JP;

Kazuya Sakai, Tokyo, JP;

Inventors:

Toshiyuki Suzuki, Tokyo, JP;

Masahiro Hashimoto, Tokyo, JP;

Kazunori Ono, Tokyo, JP;

Ryo Ohkubo, Tokyo, JP;

Kazuya Sakai, Tokyo, JP;

Assignee:

Hoya Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/22 (2012.01);
U.S. Cl.
CPC ...
Abstract

A thin film made of a material containing a metal and silicon is formed on a light-transmissive substrate. Then, a treatment is performed to modify a main surface of the thin film in advance so that when exposure light having a wavelength of 200 nm or less is accumulatively irradiated on a thin film pattern of a photomask to be produced by patterning the thin film, the transfer characteristic of the thin film pattern does not change more than a predetermined degree. This treatment is performed by carrying out, for example, a heat treatment in an atmosphere containing oxygen at 450° C. to 900° C.


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Suzuki, Toshiyuki. (2012). Photomask blank manufacturing method and photomask manufacturing method (U.S. Patent No. 8221941). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8221941

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