The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Apr. 19, 2006
Takayuki Maruyama, Kodaira, JP;
Takayuki Maruyama, Kodaira, JP;
Bridgestone Corporation, Tokyo, JP;
Abstract
A silicon carbide single crystal wafer wherein a substrate is cut out at an OFF angle from a (0001) c plane of an α-type silicon carbide single crystal of less than 2° and in an OFF direction in which a deviation from a (11-20) direction is less than 10°, the number of substantially triangular lamination defects exposed from a surface of a wafer which is epitaxial grown on the substrate is less than 4/cmover the entire surface of the wafer. The invention provides a producing method of a silicon carbide single crystal wafer capable of enhancing the utility ratio of the bulk silicon carbide single crystal, the element characteristics and the cleavage, as well as a silicon carbide single crystal wafer obtained by such a producing method.