The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Jul. 22, 2008
Po-chun Liu, Taichung County, TW;
Yih-der Guo, Hsinchu, TW;
Tung-wei Chi, Taichung County, TW;
Chu-li Chao, Hsinchu, TW;
Po-Chun Liu, Taichung County, TW;
Yih-Der Guo, Hsinchu, TW;
Tung-Wei Chi, Taichung County, TW;
Chu-Li Chao, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
An initial substrate structure for forming a nitride semiconductor substrate is provided. The initial substrate structure includes a substrate, a patterned epitaxial layer, and a mask layer. The patterned epitaxial layer is located on the substrate and is formed by a plurality of pillars. The mask layer is located over the substrate and covers a part of the patterned epitaxial layer. The mask layer includes a plurality of sticks and there is a space between the sticks. The space exposes a portion of an upper surface of the patterned epitaxial layer.