The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Mar. 31, 2009
In-jun Hwang, Yongin-si, KR;
Sun-ae Seo, Hwaseong-si, KR;
Kee-won Kim, Chungcheongnam-do, KR;
Kwang-seok Kim, Busan, KR;
In-jun Hwang, Yongin-si, KR;
Sun-ae Seo, Hwaseong-si, KR;
Kee-won Kim, Chungcheongnam-do, KR;
Kwang-seok Kim, Busan, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A magnetic memory device includes a lower structure or an antiferromagnetic layer, a pinned layer, an information storage layer, and a free layer formed on the lower structure or the antiferromagnetic layer. In a method of operating a magnetic memory device, information from the storage information layer is read or stored after setting the magnetization of the free layer in a first magnetization direction. The information is stored when the first magnetization direction is opposite to a magnetization direction of the pinned layer, but is read when the first magnetization direction is the same as the magnetization direction of the pinned layer.