The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Oct. 21, 2009
Applicants:
Kwang-jin Lee, Gyeonggi-do, KR;
Young-kug Moon, Gyeonggi-do, KR;
Young-pil Kim, Seoul, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Phase-change and resistance-change random access memory devices are provided which include a phase-change or resistance-change memory cell array and a sense amplifier that is configured to amplify data read from the phase-change memory cell array. These random access memory devices are configured to read data from a first word line of the phase-change or resistance-change memory cell array and to insert a dummy burst in which no data is read when a first boundary crossing occurs during a burst mode operation. Related methods of operating phase-change and/or resistance-change random access memory devices in burst mode are also provided.