The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Oct. 06, 2010
Shinobu Asayama, Kanagawa, JP;
Shinobu Asayama, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Abstract
A semiconductor device includes a memory cell which includes a first inverter and a second inverter, the first inverter includes a first drive transistor and a first load transistor, the second inverter includes a second drive transistor and a second load transistor, and an input terminal and an output terminal thereof, respectively, connected to an input terminal and an output terminal of the first inverter, a first transmission transistor provided between the output terminal of the first inverter and a line of a first bit line pair, a second transmission transistor provided between the output terminal of the second inverter and another line of the first bit line pair, a third transmission transistor provided between the output terminal of the first inverter and a line of a second bit line pair, a fourth transmission transistor provided between the output terminal of the second inverter and another line of the second bit line pair, and a first isolation transistor which isolates the second drive transistor and the first transmission transistor. A first active region in which the first transmission transistor, the second transmission transistor, the second drive transistor, and the first isolation transistor are formed, is formed in a continuous region. The first isolation transistor is provided between the second drive transistor and the first transmission transistor.