The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Sep. 08, 2009
Richard C. LI, San Jose, CA (US);
James Karp, Saratoga, CA (US);
Richard C. Li, San Jose, CA (US);
James Karp, Saratoga, CA (US);
Xilinx, Inc., San Jose, CA (US);
Abstract
A system for protecting metal oxide semiconductor field effect transistor (MOSFET) output drivers within an integrated circuit (IC) from an electrostatic discharge (ESD) includes a first MOSFET output driver and a second MOSFET output driver positioned within a common IC diffusion material. The system includes a contact ring coupled to the common IC diffusion material and arranged along an outer edge of a perimeter surrounding the MOSFET output drivers. A centroid of each MOSFET output driver is common with a centroid of the perimeter surrounding both MOSFET output drivers. Each MOSFET output driver has a value of substrate resistance (R) that initiates bipolar snapback in the MOSFET output driver at which an ESD event occurs. The value of Rdepends upon a composite distance from the centroid of each MOSFET output driver to the contact ring.